rtr040n03 transistors rev.a 1/4 2.5v drive nch mos fet rtr040n03 z structure silicon n-channel mos fet z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3). z application power switching, dc / dc converter. z external dimensions (unit : mm) each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4 abbreviated symbol : qv z packaging specifications package code taping basic ordering unit (pieces) rtr040n03 tl 3000 type z absolute maximum ratings (ta=25 c) ?1 ?1 ?2 parameter v v dss symbol 30 v v gss 12 a i d 4.0 a i dp 16 a i s 0.8 a i sp 16 w p d 1.0 c tch 150 c tstg ?55 to +150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ?1 pw10s, duty cycle1% ?2 mounted on a ceramic board source current (body diode) z equivalent circuit (1) gate (2) source (3) drain ?1 esd protection diode ?2 body diode ?2 ?1 (3) (1) (2) z thermal resistance c / w rth (ch-a) 125 parameter symbol limits unit channel to ambient ? mounted on a ceramic board ?
rtr040n03 transistors rev.a 2/4 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ?? 10 av gs =12v, v ds =0v v dd 15v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 34 48 i d = 4.0a, v gs = 4.5v ? 36 50 m ? m? m? i d = 4.0a, v gs = 4.0v ? 47 66 i d = 4.0a, v gs = 2.5v 4.0 ?? sv ds = 10v, i d = 4.0a ? 475 ? pf v ds = 10v ? 120 70 ? pf v gs =0v ? 10 ? pf f=1mhz ? 18 ? ns ? 37 ? ns ? 19 ? ns ? 5.9 ? ns ? 1.0 8.3 nc ? 2.0 ? nc v gs = 4.5v ?? nc i d = 4.0a v dd 15 v i d = 2.0a v gs = 4.5v r l =7.5? r g =10? r l =3.75? r g =10? ?pulsed ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v forward voltage i s = 0.8a, v gs =0v parameter symbol min. typ. max. unit conditions
rtr040n03 transistors rev.a 3/4 z electrical characteristic curves 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 gate-source voltage : v gs (v) fig.1 typical transfer characteristics drain current : i d (a) v ds =10v pulsed ta=125c 75c 25c ?25c v gs =4.5v pulsed ta= 125c 75c 25c ?25c 0.01 1 0.1 10 10 100 1000 static drain-source on-state resistance : r ds (on) (m ? ) drain current : i d (a) fig.2 static drain-source on-state resistance vs. drain current v gs =4.0v pulsed ta= 125c 75c 25c ?25c 0.01 1 0.1 10 10 100 1000 static drain-source on-state resistance : r ds (on) (m ? ) drain current : i d (a) fig.3 static drain-source on-state resistance vs. drain current v gs =2.5v pulsed ta= 125c 75c 25c ?25c 0.01 1 0.1 10 10 100 1000 static drain-source on-state resistance : r ds (on) (m ? ) drain current : i d (a) fig.4 static drain-source on-state resistance vs. drain current ta=25c pulsed 0 0 2468101 20 40 60 80 100 120 140 160 180 200 static drain-source on-state resistance : r ds (on) (m ? ) gate source voltage : v gs (v) fig.5 static drain-source on-state resistance vs. gate-source voletage 2 i d =4.0a i d =2.0a v gs =25 c pulsed v gs =2.5v v gs =4.0v v gs =4.5v 0.01 1 0.1 10 10 100 1000 static drain-source on-state resistance : r ds (on) (m ? ) drain current : i d (a) fig.6 static drain-source on-state resistance vs. drain current 0.01 1 10 100 0.1 1.0 0.5 0.0 1.5 source current : i s (a) source-drain voltage : v s d (v) fig.7 source current vs. source-drain voltage v gs =0v pulsed ta= 125c 75c 25c ?25c ta=25 c f=1mhz v gs =0v c iss c oss c rss 0.01 1 0.1 10 100 10 100 1000 capacitance : c (pf) drain source voltage : v ds (v) fig.8 typical capacitance vs. drain-source voltage 0.01 1 1 0.1 10 10 100 1000 10000 switching time : t (ns) drain current : i d (a) fig.9 switching characteristics ta=25 c v dd =15v v gs =4.5v r g =10? pulsed t f t r t d(off) t d(on)
rtr040n03 transistors rev.a 4/4 0 0 1 2 3 4 5 12345678 gate-source voltage : v gs (v ) total gate charge : qg (nc) fig.10 dynamic input characteristics ta=25 c v dd =15v i d =4.0v r g =10? pulsed z measurement circuits fig.11 switching time test circuit v gs r g v ds d.u.t. i d r l v dd fig.12 switching time waveforms 90% 50% 50% 10% 10% 90% 90% 10% v gs v ds t on t off t r t d(on) t r t d(off) pulse width fig.13 gate charge test circuit v gs i g (const.) r g v ds d.u.t. i d r l v dd fig.14 gate charge waveform v g v gs charge q g q gs q gd
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
|
